大功率分立器件
峰值功率20W-1000W; 工作頻率10MHz-6GHz;基于自主知識產權的28V,50V LDMOS和GaN工藝平臺開發 全國產供應; 封裝材料自主開發設計,具有低成本、高可靠性。
產品型號
|
Min. Freq
|
Max. Freq
|
VDD
|
Pavg(dBm)
|
DE@Pavg
|
Gain(dB)
|
ACPR (dBc)
|
Test Freq.(MHz)
|
MP Status
|
Package
|
Process
|
---|---|---|---|---|---|---|---|---|---|---|---|
HTH8G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 53.40% | 20.4 | -28.8 | 758 | MP | ACC2110S-4L | LDMOS |
HTH9G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 54% | 20 | -25 | 945 | MP | ACS2110S-4L | LDMOS |
HTH9G09P700S | 758 MHz | 803 MHz | 48 V | 50.5 | 56% | 19.5 | -25 | 780 | MP | ACS3210S-4L | LDMOS |
HTN9G22P370S | 1805 MHz | NA | 28 V | 47.3 | 48% | 16 | -30 | 2140 | MP | ACS2110S-4L | LDMOS |
HTN8G27S015P | 700 MHz | 2700 MHz | 28 V | 30 | 12% | 20.2 | -49.5 | 2600 | MP | PDFN5*5 | LDMOS |
HTN8G36S015P | 3300 MHz | 3600 MHz | 28 V | 30 | 11.9% | 18.2 | -48.9 | 3450 | MP | PDFN5*5 | LDMOS |
HTH1D27P550S | 2496 MHz | 2690 MHz | 48 V | 49 | 56.30% | 15.7 | -26.8 | 2496 | MP | ACS2110S-4L2L | GaN |
HTH1D09P700S | 700MHz | 960MHz | 48V | 50.5 | 0.633 | 17.9 | -26.4 | 780 | ACS2110S-4L | GaN | |
HTH1D36P450H | 3400MHz | 3600MHz | 48V | 47.4 | 0.487 | 14.5 | -27 | 3500 | ACC2110S-4L | GaN | |
HTH1D38P060P | 3300MHz | 4000MHz | 48V | 39 | 0.517 | 14.1 | -28.9 | 3500 | DFN7x6.5 | GaN | |
HTH1D38S010P | 2300MHz | 4000MHz | 48V | 27 | 0.178 | 19.3 | -41.3 | 3600 | DFN4x4 | GaN | |
HTH9G09P551S | 300MHz | 960MHz | 50V | 49 | 0.498 | 19.6 | -51.4 | 628 | ACS2110S-4L | LDMOS | |
HTN7G21S040P | 700MHz | 2100MHz | 28V | 36 | 0.176 | 22 | -46 | 940 | TO-270 | LDMOS | |
HTN8G27P040P | 2496MHz | 2690MHz | 30V | 38 | 0.49 | 17.5 | -31 | 2600 | DFN7.5x5 | LDMOS | |
HTN8G27S020PG | 700MHz | 2700MHz | 28V | 33 | 0.149 | 19.3 | -47 | 2120 | TO-270 | LDMOS |